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Rumah > Produk > Keramik silikon karbida > Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications

Rincian produk

Tempat asal: CN

Nama merek: Dayoo

Syarat Pembayaran & Pengiriman

Kuantitas min Order: Disesuaikan

Harga: CNY

Kemasan rincian: Kemasan

Waktu pengiriman: 60 hari kerja

Menyediakan kemampuan: pabrik

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Menyoroti:
Konduktivitas termal yang tinggi:
Ya
Ketahanan terhadap guncangan termal:
Bagus
Suhu maksimum:
1380 ℃
Kekuatan Lentur:
280 Mpa
Kemurnian:
98%
Kekuatan Tekan:
> 2 IPK
Konduktivitas termal yang tinggi:
Ya
Ketahanan terhadap guncangan termal:
Bagus
Suhu maksimum:
1380 ℃
Kekuatan Lentur:
280 Mpa
Kemurnian:
98%
Kekuatan Tekan:
> 2 IPK
Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications
Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier | Precision Hollow SiC Ceramic Support Plate Product Introduction This product is a Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier, manufactured from high-purity silicon carbide (SiC) ceramic raw materials. It features an overall diamond outline with multi-layer annular radial hollow structure in the center. Fabricated via atmospheric pressure high-temperature sintering and precision machining, it boasts